A major breakthrough: 1200V E-Mode GaN HEMTs - GaNPower
Aug 2, 2018 · GaNPower International Inc. (GPI) is proud to announce a major technological breakthrough in gallium nitride (GaN) power electronics. GPI has succeeded in the design and …
GaNPower Demonstrates Industry’s First 1200 V Single-Die E-Mode GaN …
New 1200V GaNFET Power Switching Capability Demonstrated at 800V. Sept., 2021— GaN Power International, an industry leader in gallium nitride (GaN) device technology and GaN …
1200V GaNFET in DFN8x8 Package - GaNPower
GaNPower International Inc. is pleased to announce the release of 1200V EMODE single-die GaNFET in its first DFN8x8 format at the engineering sampling stage. The new product (code …
Simulation Model of Industry's First 1200 V GaN-on-Sapphire …
May 8, 2023 · GOLETA, Calif. — Transphorm, Inc. (Nasdaq: TGAN)—global leader in fundamentally superior, quantitatively outperforming GaN power semiconductors—today …
Demonstrated GaN module shows a great potential for applications in the voltage range of 900 and 1200V Future work is planned to complete measurements at higher power level up to 20 …
1200 V GaN-on-Si Junction Barrier Schottky (JBS) Diodes by an E …
Here we report GaN-on-Si JBS diodes based on an e-mode-compatible process. Thanks to a judicious design of p-GaN islands in the anode, the JBS diode presents enhanced breakdown …
GaN power electronics - Fraunhofer IAF - Fraunhofer Institute for ...
Lateral and vertical 1200 V GaN devices. 1200 V devices are an essential development in the field of electromobility and in electric drive, charging and transmission technology.
Transphorm Releases Industry’s First 1200V Sapphire-Based GaN …
May 21, 2024 · Transphorm, a global leader in GaN (gallium nitride) power semiconductors, recently released the industry’s first 1200V sapphire-based GaN device simulation model and …
World's first 700V and 1200V vertical GaN devices in production
Feb 2, 2023 · NexGen Power Systems has started shipping engineering samples of the first 700V and 1200V vertical GaN devices for high power applications. The 1200V Vertical GaN e-mode …
1200V E-mode GaN Monolithic Integration Platform on ... - IEEE …
1200V E-mode GaN Monolithic Integration Platform on Sapphire with Ultra-thin Buffer Technology Abstract: This paper firstly reported the 1200V enhancement-mode (E-mode) Gallium Nitride …