Dec 30, 2021 · High quality GaAs based epistructures from PAM-XIAMEN – one of leading epitaxial wafer manufacturers are provided for the research, development and (potentially) …

IQE offers the industry's broadest range of RF epitaxial wafer products for wireless communication, radar, and RF heating applications across the radio frequency spectrum …

Jan 24, 2025 · By heteroepitaxy of III-V semiconductor materials (such as GaAs) on a silicon substrate, high-quality laser monolithic integration can be achieved, which not only effectively …

Designed specifically for today’s CDMA and GSM wireless devices and OC-192 networking applications, Epiworks’ InGaP/GaAs heterojunction bipolar transistors (HBT) deliver the …

VIGO Photonics’ Epi-house offers top-quality MOCVD epitaxial growth of a full range of Quantum Cascade Laser structures – we have a long track record of developing designs for numerous …

Professor Richard Hogg, Chief Technical Officer at III-V Epi, explains how design engineers might use epitaxial regrowth to enhance semiconductor laser performance and unlock new markets.

Jan 15, 2022 · We can provide high-performance VCSEL (Vertical Cavity Surface Emitting Laser) epi wafer grown on GaAs or InP by MBE or MOCVD for the optical communication and …

Jan 18, 2017 · We have developed 2-inch GaAs/Ge/Si(100) epitaxial substrates with a 200–300 nm Ge buffer layer. Ge and GaAs layers were grown using the HW-CVD and MOCVD …

LED epi layer on GaAs (gallium arsenide) substrate grown by MOCVD is for fabricating devices with yellow, green, red or infrared light.

Apr 8, 2018 · We offer epi processing on GaAs as well as InP wafer, and then using MOVPE and MBE method for fabricating the lasers with discrete electron modes. When processing epitaxy …