
Tensilely Strained Ge Films on Si Substrates Created by ... - Nature
Nov 13, 2018 · In this work, we present a new approach of creating tensilely strained intrinsic Ge films on Si substrates through physical vapor deposition of solid Ge sources. Compared to the …
Growth and characterization of germanium epitaxial film on silicon …
Sep 20, 2013 · The quality of germanium (Ge) epitaxial film grown directly on a silicon (Si) (001) substrate with 6° off-cut using conventional germane precursor in a metal organic chemical …
Epitaxial germanium thin films on silicon (100) using two-step …
Scanning electron microscopy (SEM) reveal that the resulting germanium films are continuous, conformal and crack-free. X ray diffraction (XRD) pattern in the θ-2θ configuration shows a …
Wafer-scale epitaxial germanium (100), (111), (110) films on silicon ...
Jul 12, 2018 · In this work we present a liquid-phase crystallization (LPC) method to obtain epitaxial Ge on silicon. The method starts with deposition of amorphous Ge on silicon. The Ge …
Effects of phosphorous and antimony doping on thin Ge layers
Apr 4, 2024 · Suppression of threading dislocations (TDs) in thin germanium (Ge) layers grown on silicon (Si) substrates has been critical for realizing high-performance Si-based optoelectronic …
High Quality GaAs Epilayers Grown on Si Substrate Using 100 nm Ge ...
Sep 7, 2016 · The XRD FWHM range of GaAs films on Ge/Si is 180–276 arcsec [19 – 21]. Thick Ge buffer layer can obtain high quality GaAs cells, but it reduces the optical loss of bottom Si …
Efficient Fabrication of Nanoporous Si and Si/Ge Enabled by a …
Jul 17, 2013 · By employing table salt (NaCl) as a heat scavenger for the magnesiothermic reduction, we demonstrate an effective route to convert diatom (SiO 2) and SiO 2 /GeO 2 into …
Characterization and mechanism of crystallization of Ge films …
Sep 1, 2018 · In this paper, we demonstrate the effects of substrate temperature and annealing parameters on Ge film quality through XRD and Raman measurements. The mechanism of …
High-resolution XRD characterization of SiGeC structures for high ...
Sep 29, 2005 · It will be demonstrated in the following how high resolution X-ray diffraction (HRXRD) can be used to characterize SiGeC HBT structures with high precision and reliability. …
Influence of Annealing Temperature Variations on the Structural ...
Mar 29, 2025 · X-ray Diffraction (XRD) Analysis. Figure 2 presents the XRD patterns for the Ge 35 Se 65 TFs, both as-deposited and annealed at 373 and 523 K. The analysis indicates that …