Deposition Systems for Compound Semiconductors G10-GaN 150/200 mm high throughput epitaxy for GaN power & RF applications

Jun 9, 2023 · The new G10-GaN provides best-in-class performance in a compact cluster for high-volume manufacturing of Gallium Nitride (GaN) based power and RF devices.

G10-GaN enables seamless process transfer from today‘s tool of record AIX G5+ C

Sep 6, 2023 · At the SEMICON Taiwan 2023 event in Taipei (6-8 September), deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany has launched its new G10-GaN cluster metal-organic chemical vapor deposition (MOCVD) platform for gallium nitride (GaN)-based power and radio frequency (RF) devices, offering what is claimed to be best-in-class ...

Sep 7, 2023 · AIXTRON SE has unveiled the G10-GaN cluster solution for high-volume manufacturing of Gallium Nitride (GaN) power and RF devices. The platform delivers superior performance, a compact design, and cost-efficiency.

Nov 21, 2023 · For this strategic step, BelGaN is relying on Aixtron’s new G10-GaN metal-organic chemical vapor deposition (MOCVD) system, which offers what is claimed to be best-in-class performance, an all-new compact design, and overall lowest cost per wafer.

Nov 22, 2023 · The G10-GaN by AIXTRON is a state-of-the-art deposition system for 150/200 mm GaN epitaxy, designed for GaN power and RF applications. It features a compact cluster design with three process chambers, reducing the footprint by 50% while maximizing wafer yield per square meter.

The G10-GaN introduces a range of innovative features and sets a new standard in performance, design, and cost efficiency. AIXTRON is proud to have qualified the G10-GaN platform for volume production of GaN power devices with a leading US device manufacturer.

Sep 6, 2023 · Deposition equipment specialist Aixtron SE has launched a new compact cluster solution for GaN based power and RF devices. The G10-GaN is currently being presented at SEMICON Taiwan in Taipei.

The G10-GaN will be used to further extend the range of power chips with voltage ratings from 40V to 1200V, using GaN-on-Si, GaN on SOI, and novel GaN-on-engineered substrates.