
From the RGA spectrum of resist 1 some species can be identified, e.g. species related to PAG (Photo acid generator) or PG (protection groups). The contribution of the identified species PAG1, PAG2, and PG1, are compared towards the total outgassing.
High Sensitivity Resists for EUV Lithography: A Review of Material ...
Extreme ultraviolet (EUV) lithography using 13.5 nm wavelength exposure is expected to be the main industrial option for pushing further the resolution limit in sub 20 nm region.
• RGA outgassing measurement has been characterized; it was found that reported values can depend on – the time dependent RGA sampling plan with respect to resist exposure (amount of post-exposure outgassing); – the used test gas in RGA calibration and whether a correction is applied based on species identification;
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V EUV RESULTS
In addition to the contamination growth (CG) from the witness sample testing, benefit has been found in the RGA outgas measurement, where simple analysis can provide complementary information (integrated COR). This RGA parameter is typically correlating very well with CG, and this correlation has been demonstrated on multiple sites.
EUV Photoresist Outgassing Analysis: RGA & Witness Plate Testing
RGA is based on in situ mass spectrometer measurements during photoresist EUV exposure and enables chemical identification of species that are outgassing, but has limited information on the probability of mirror contamination.
We have successfully developed the first commercial EUV Resist Outgassing and Reticle Contamination Tool to evaluate the candidate EUV resists for the ADT where 13.5 nm light is collected and deliver 60 mW/cm*2 to a small spot on a …
The contamination caused by EUV + resists + hydrogen is not well understood. The concern is only with “non-traditional” resists that have unusual elements. NIST is investigating the feasibility of contamination tests with hydrogen. Hydrogen in …
TNO is realizing EBL2, a facility to investigate the effects of EUV radiation on surfaces to enable future EUV HVM production. At present the concept design is finalized and detailed design is almost complete and construction has started on both the cleanroom and the hardware.
To this end, we propose EBL2: a laboratory EUV exposure system capable of operating at high EUV powers and intensities, and capable of exposing and analyzing EUV masks. The proposed system architecture is similar to the EBL system which has been operated jointly by TNO and Carl Zeiss SMT since 2005.
Measurement and analysis of EUV photoresist related outgassing …
Mar 1, 2009 · RGA is based on in situ mass spectrometer measurements during photoresist EUV exposure and enables chemical identification of species that are outgassing, but has limited information on the ...