EUV lithography makes scaling more affordable for chipmakers and allows the semiconductor industry to continue its pursuit of Moore’s Law. EUV systems are used to print the most …

Advance EUV patterning on the ASML NXE:3300/ CLEAN TRACKTM LITHIUS ProTM Z- EUV litho cluster is launched at imec, allowing for finer pitch patterns for L/S and CH. Tokyo …

EUV mirror tilts must be controlled with sub-nrad accuracy to enable sub-nm image placement Test module for EUV mirror positioning The final result: ZEISS Starlith ® 3300 optics delivers …

Pupil shapes with smaller PFR can be supported on the Starlith® 3300 illuminator, by switching off pupil channels, reducing the illuminator efficiency. .... benefit of reduced 20% pupil fill ratio …

Optics for EUV Lithography have evolved over three decades to a level where excellent imaging is demonstrated. Right now, the Starlith® 3400 Optics extends EUV Lithography to 13nm single …

Shipping in 2013, the NXE:3300 is the second generation of ASML’s EUV exposure platform. We review the current status of EUV optics production for the NXE:3300 tools. Four customer …

Shipping in 2013, the NXE:3300 is the second generation of ASML’s EUV exposure platform. We review the current status of EUV optics production for the NXE:3300 tools. Four customer …

Apr 17, 2014 · The first NXE3300B systems have been qualified and shipped to customers. The NXE:3300B is ASML’s third generation EUV system and has an NA of 0.33. It succeeds the …

NXE:3300 – first mirrors in flare specification [year] First results on 3300 mirrors well below the 6% flare Specification – Flare level 4% (below a 2μm line) for customer optics

Standard EUV coatings are not able to reflect the combination of large angles and large angular spread needed for high-NA. . . Anamorphic design. Limits incident angles on mask, enables …