By reduction of row-hit rate in recent workloads, especially in multi-core systems, precharge rate increases which exacerbates DRAM power dissipation and access latency. This work proposes a novel DRAM structure, called Precharge-Free DRAM (PF-DRAM), that eliminates the Precharge phase of DRAM.

This paper presents Virtual FA, an innovative approach to enhance the DRAM production quality in Samsung and field quality in customers. By leveraging telemetry data from customer deployment fleet, our method classifies failure types and perform risk assessment without physical analysis, enabling swift and effective issue identification and ...

hardware accelerator for OS-managed caching called the page fault accelerator (PFA). The PFA works by handling latency-critical page faults (cache-miss) in hardware, while allowing the OS .

Jul 2, 2021 · By reduction of row-hit rate in recent workloads, especially in multi-core systems, precharge rate increases which exacerbates DRAM power dissipation and access latency. This work proposes a novel DRAM structure, called Precharge-Free DRAM (PFDRAM), that eliminates the Precharge phase of DRAM.

Dec 2, 2021 · Precharge-Free DRAM (PF-DRAM), where the bitlines flip only when the accessed cell value differs from the previous value during the last cell access via those bitlines.

Physical failure analysis (PFA) of advanced technology nodes mainly face three main challenges: i) Shrinking dimensions require to get sufficient resolution to observe the defects. ii) The chemical complexity of deposited layers may lead to misinterpretation of the analyzed faults.

Jun 15, 2021 · DRAM在每次读、写、刷新之前都需要预充电 (Precharge)，将bitlines的电压稳定在VDD/2。 如上图，PRE阶段在整个读、写周期占用的时间较长，Precharge和Activation占用了大部分的DRAM能耗。 因此本文设计出不需要Precharge的DRAM电路结构，从而节省DRAM整体能耗的同时提升性能。 2. 传统DRAM工作过程. 传统DRAM一次操作过程包括precharge，charge sharing，sensing，restoration，column select共5个阶段。 激发PE信号，M1、M2、M3导 …

Understanding DRAM Architecture R. Govindarajan Computer Science & Automation Supercomputer Edn. & Res. Centre Indian Institute of Scinece, Bangalore [email protected] . Why Study Memory System? • Memory Wall [McKee’94] –CPU-Memory speed disparity –100’s of cycles for off-chip access DRAM

Jul 7, 2015 · We adopted this modified milling method to the TEM sampling of a real failure case and obtained a PFA result of a 2 bit failure using plan-view TEM image as shown in figure 2-(c). The new modified milling method turned out to be very …

Jun 29, 2015 · Abstract: We developed a technique to investigate the root cause of Write Recovery Time (tWR) failure on Circuit Probing for 30nm DRAM. We take Electrical Failure Analysis (EFA) to probe the Drain current (Id) and detected the unbalanced between forward Drain-Source currents (Ids, forward) and reverse Drain-Source currents (Ids, reverse) on ...