Schematics showing three DRAM cell structures • In the case of a planar capacitor structure, excessively large area is needed to satisfy the requirement of storage capacitance per cell …

Feb 22, 2008 · The effectiveness of 6F2-cell-based DRAM is reduced by the additional design challenges associated with an open bitline architecture: underused edge arrays and fewer …

We present a 46 nm 6F 2 buried word-line (bWL) DRAM technology, enabling the smallest cell size of 0.013 mum2 published to date. The TiN/ W buried word-line is built below the Si …

Then, we analyze AIB characteristics based on the microscopic view of the DRAM microarchitecture, such as 6F2 cell layout, through which we rectify misunderstandings …

first uncover the size, structure, and operation of DRAM subarrays and verify our findings on the characteristics of DRAM. Then, we correct misunderstood information related to AIBs and …

Dec 1, 2001 · A multigigabit DRAM technology was developed that features a low-noise 6F² open-bitline cell with fully utilized edge arrays, distributed overdriven sensing …

Abstract: A novel process technology for 6F/sup 2/ DRAM cell at 68nm design rule was for the first time developed. The cell size is 0.028/spl mu/m/sup 2/, which is the smallest cell size ever …

Abstract: We present a sensing scheme with local bitline sense amplifier (L-BLSA) for sub-1V DRAM core operation, which activates a low-Vt latch locally in time, the same as [1] but shares …

Feb 25, 2008 · We propose architectural enhancements that address these limitations and make PCM competitive with DRAM. A baseline PCM system is 1.6× slower and requires 2.2× more …

DRAM cells have used an 8F 2 architecture for many years. This design allows for the use of a folded bitline architecture, which helps reduce noise. [5] . Comparing with 6F 2, due to larger …