Schematics showing three DRAM cell structures • In the case of a planar capacitor structure, excessively large area is needed to satisfy the requirement of storage capacitance per cell (typical value is 25~30 fF) • Since the generation of 4Mb DRAM, trench capacitor or stacked capacitor structure has been

A DRAM uses arcuate moats 18 and wavy bit lines 28, 30 for the array of memory cells. A bit line contact 20 occurs at the apex of the moat and storage node contacts 22, 24 occur at the ends of...

Sep 3, 2024 · Modern DRAM is made possible by two separate and complementary inventions: the 1T1C memory cell, and the sense amplifier. The 1T1C cell was invented in 1967 at IBM by Dr. Robert Dennard, also well known for his eponymous MOS transistor scaling law.

A new dRAM cell named "CCC" (Corrugated Capacitor Cell) has been successfully developed based on the one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in an almost independent increase in storage capacitance without cell size enlargement.

In this paper, basic DRAM cells are designed using low power design techniques namely, sleep, stack and sleepy stack for leakage power reduction. These DRAM cells are simulated using TANNER EDA tool and comparison ofpower consumption is done for conventional DRAM cells and the proposed cells.

Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology.

Abstract: A new MOS dynamic random access memory (dRAM) cell named "CCC" has been successfully developed based on a one-device cell concept. This CCC is characterized by an etched-moat storage-capacitor extended into the substrate, resulting in almost independent increase in storage capacitance C S of its cell size.

In this manuscript, we propose a new DRAM cell composed of a vertical Silicon Wire Field-Effect Transistor (SWFET) stacked on top of a high-dielectric constant capacitor that holds the industry-standard 32 fCoul charge. The DRAM cell used in the simulations is shown in Figure 1.

A DRAM cell consists of a capacitor connected by a pass transistor to the column line (or bit line or digit line). The column line (or digit line) is connected to a multitude of cells arranged in a column.

•JEDEC Spec: At normal temp, cell retention time limit is 64ms. At high (extended) temp, retention time halves to 32ms. •The memory controller issues refresh operations periodically.