CIS技术中，背照式(BSI)相比前照式(FSI)有何优势？
Apr 23, 2023 · 本文将基于2022年11月举行的第10届SK海力士学术会议 (SK hynix Academic Conference)内容对CIS关键技术之一的背照式 (Backside Illumination, BSI)技术进行介绍。 前照式 (FSI)技术及其局限性. 早期的CIS产品像素采用前照式 (FSI)结构，这种结构将光学结构置于基于CMOS1)工艺的电路上。 这项技术适用于像素尺寸为1.12μm及以上的大多数CIS解决方案，被广泛用于移动设备、闭路电视 (CCTV)、行车记录仪、数码单反相机、车用传感器等产品。
What's the Difference Between CMOS, BSI CMOS, and Stacked CMOS? - PCMag
Jan 18, 2024 · Stepping up to a model with a BSI CMOS sensor ups readout speed and improves low-light imaging. Stacked CMOS chips push the speed envelope even further and keep your subject in perfect view...
CMOS Image Sensors (CIS): Past, Present & Future
Jun 15, 2017 · Fig. 3: FSI vs. BSI. BSI technology involves turning the image sensor upside down and applying color filters and micro lenses to the backside of the pixels, so that the sensor can collect light through the backside. BSI has a deep photo-diode and short optical path, leading to a higher Quantum Efficiency (1) (QE) and Lower Crosstalk (2) (see ...
[Sensor Type] What is different between FSI sCMOS and BSI …
Mar 22, 2025 · There are two variants of CMOS: Front-side illuminated (FSI) and back-side illuminated (BSI). Front-side illuminated sensors use a grid of wiring and electronics on top of the light-sensitive pixels to manage the sensor.
小谈CMOS Sensor 设计之FSI和BSI - 知乎 - 知乎专栏
顾名思义，FSI光从正面入射进入感光区，BSI是指光从背面入射进入感光区。 前和背对应的是半导体制成工艺的front-end-of-line (FEOL)和back end of line (BEOL)。 其实就是说是半导体加工后段制程sensor金属连接布线。 其实在FSI和BSI发展的过程中还有一个中间产物一种叫wave-guided导光结构，在FSI的基础上对光学路径优化，可以允许更多光线进入感光区提升了 量子效率 QE。 量子效率简单的理解就光电转换能力的评价。 Wave-guided的具体做法是在metal中间填入高折 …
CMOS Image Sensor的制造 - 知乎 - 知乎专栏
在设计一款CIS之前，从工艺的角度，最先需要做出选择的可能就是FSI（front-side illumination）还是BSI（back-side illumination）。 FSI和基础的CMOS logic工艺一样，首先完成前道工艺（FEOL，front-end-of-line），然后做后道工艺（BEOL，back-end-of-line），最后在表面做光学模块（color filter以及micro-lens）。 FSI的一个主要问题在于光进入到silicon之前需要穿过较厚的金属布线层，这导致了较多的光子损失，影响了最终的量子效率（QE，quantum …
Backside illuminated (BSI) complementary metal-oxide-semiconductor ...
Jan 1, 2020 · In this section we describe briefly the challenges for scaled down pixels in a modern complementary metal-oxide-semiconductor (CMOS) image sensor chip. We review various technologies used to overcome these challenges and show why BSI is the most natural solution for such sensors.
CMOS Image Sensors: Evolution, Patent Trends, Leading Players
The CMOS image sensors can be categorized into Front-Side Illuminated (FSI) and Backside Illuminated (BSI) based on the placement of the photodiode and interconnects layers concerning each other. In the next section, we will discuss the advantages of …
backside illumination (BSI) has significant advantages over front-side illumination (FSI) on the ground that BSI brings light in through the thinned backside of the silicon substrate to the photosensitive area [1,2]. As shown in Fig. 1, with the conventional FSI approach the amount of light reaching the
CIS（Cmos Image Sensor，即CMOS图像传感器）芯片杂谈 - 吴建 …
Jan 19, 2024 · 根据CMOS传感器技术工艺分类，可将其分为FSI、BSI和Stacked三种结构，其主要差别在感光元件位置不同。 （1）前照式（FSI，Front Side illumination）： 金属线路位于感光元件的上面，感光路径会因芯片的感光组件上方金属层干扰，而造成光感应敏度衰减； （2）背照式（BSI，Back Side illuminated）： 感光元件位于金属线路的上方，提升了感光效率； （3）堆栈式（Stacked）：将原本与像素处于同一平面的逻辑电路移到下方， 形成像素层和逻辑芯片层两 …