This paper compares three power switch technologies: Superjunction (SJ), Silicon Carbide (SiC), and Gallium Nitride (GaN), and the effect of the respective parasitic components on the converter...

Aug 4, 2022 · Here, this work evaluates the temperature dependence of these basic parameters of the third-generation wide-bandgap semiconductors including 4H-SiC, GaN, and β-Ga 2 O 3, based on which Baliga’s figure of merit (BFOM = ε r × μ × Eg3) is obtained correspondingly.

For example, in the case of a low-frequency unipolar vertical power switch, the Baliga figure of merit (BFOM, [4]) is defined as VBR2/RON-SP, where VBR is the breakdown voltage (the maximum voltage the switch can block when it is off), and RON-SP is the specific on-resistance (the inverse of the conductance per unit area when the switch is on).

Oct 20, 2016 · This chapter highlights the advantages and disadvantages and the most crucial characteristics of technologies such as Si, SiGe, GaN, InP, GaAs and SiC when considering implementation of a system in military application and EW; these are also applicable to commercial and space uses.

BFOM Ratio Material ε Eg 9.5 9.7 13.1 11.4 GaN 3.4 24.6 80 700 C SiC 2.9 3.1 60 600 C GaAs 1.4 9.6 3.5 300 C Si 1.1 1.0 1.0 300 C BFOM = Baliga’s figure of merit for power transistor performance [K*µ*Ec3] JFM = Johnson’s figure of merit for power transistor performance (Breakdown, electron velocity product) [Eb*Vbr/2 π] Materials ...

... εsμnEc is the intrinsic properties of semiconductor materials, commonly referred to as Baliga's figure of merit (BFOM). Table 1 lists the physical properties of Si, GaAs, SiC, GaN, and...

Sep 11, 2000 · The thermo-optic coefficient ∂n/∂T has been measured from room temperature to 600 K at the wavelength of 1523 nm in three important semiconductors for fiber-optic device fabrication, namely, InP, GaAs, and 6H–SiC.

Apr 11, 2019 · By deliberately designing the width and height of the SP, the high concentrated electric field (E-field) under p-GaN cap could be separated without dramatically impacting the RON, turning out an enhanced Baliga’s Figure-Of-Merits (BFOM, BV2/RON).

Johnson quality factor (JMF) and the Baliga quality factor (BFOM), two key parameters to characterize a semiconductor material for high power and high frequency applications, can be expressed as...

Jan 22, 2015 · In this study, we demonstrate the fabrication of the GaAs/SiC structure in the wafer scale by the room-temperature SAB method to realize thin-film semiconductor lasers directly bonded on SiC substrate.