Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs, a type of transistor aging. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation is often approximated by a power-law dependence on time.

The most prominent form of BTI when dealing with modern CMOS technologies occurs when the gate of a pMOSFET is biased negatively (in the strong inversion regime); this is called NBTI. When the gate is biased positively, the phenomenon is called PBTI.

Dec 11, 2018 · In this way, we detail a physics-based model to get a better insight into the prediction of threshold voltage degradation for aging ranges going from days to years, in 180-nm MOS technology. We highlight that a physics-based BTI model improves accuracy in comparison to lookup table models.

since it degrades the performance of p- and n-channel MOSFETs used in CMOS circuits. BTI results in a gradual shift in MOSFET characteristics, such as threshold voltage (VT), transconductance (gm), subthreshold slope (S), linear and saturation drain current (IDLIN and IDSAT), etc., over time [8], and h

Feb 1, 2018 · In this paper we summarize our understanding of the BTI mechanism in scaled CMOS technologies and discuss the correlation between discrete device degradation and circuit/SRAM aging.

Jan 1, 2015 · Bias Temperature Instability (BTI) is a crucial reliability issue since it degrades the performance of p- and n-channel MOSFETs used in CMOS circuits.

CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a key issue. Negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) mainly degrade the performance of pMOSFETs and nMOSFETs, respectively.

May 1, 2022 · Device aging mechanisms such as Bias Temperature Instabilities (BTI) and Hot-Carrier Injection (HCI) degradation are of increasing importance in deep CMOS scaled technologies, significantly reducing device and circuit reliability [1].

Nov 1, 2021 · Two examples of CDFs are shown in Fig. 7 for BTI and HCI tests on pMOS at nominal (1.2 V) (Fig. 7 a and b) and accelerated (2.5 V) (Fig. 7 c and d) conditions. Fig. 7 a and b show that Δ|Vth| increases with time, being the shifts larger when |V DS | ≠ 0.

Bias Temperature Instability (BTI) and Hot-Carrier Degradation (HCD) are key aging mechanisms, frequently studied with transistor measurements or inverter-based