Jun 26, 2020 · In order to erase the effect of photoelectron scattering between different photosensitive units, the Deep Trench Isolation (DTI) layer was used to isolate it. However, the main figure of DTI layer is relatively isolated. Under KrF exposure condition, the process window is …

Jul 23, 2019 · (3) active Si thickness and deep trench isolation (DTI) structures, and (4) non-Bayer color filter arrays, and phase detection autofocus (PDAF). In Part 2 of this blog series we identified DTI as a critical small pixel scaling enabler, but why? Why is …

Back-side deep trench isolation (B-DTI) with high-k film passivation is widely used in back-side illuminated (BSI) CMOS image sensor (CIS) technologies. Since the high-k film is weakly adhered to silicon or ultrathin silicon-oxidation, high-k bubble (HKBB) defects is a challenge to enlarge the wafer back-side processing window.

Jun 8, 2011 · A deep trench isolation (DTI) process with a 4 mum deep trench has been developed and successfully applied to 5-megapixel complementary metal oxide silicon (CMOS) image sensors with a 1.7 mum...

This paper presents a 2.2μm pixel pitch back side illuminated (BSI) Voltage Domain Global Shutter (VDGS) image sensor with Stacked Pixel Level Connection (SPLC) and full backside Deep Trench Isolation (DTI).

Dec 16, 2021 · DTI:deep trench isolation，深沟槽隔离。 主要是隔离silicon中pixelarray之间可能发生的电子扩散/漂移到相邻像素中造成的串扰； （1）DTI结构示意图（2）crosstalk&DTI. 通过BCFA和背部DTI结构隔离来提高大阵列BSI sensor透光性；Backside不但在颜料层有Wgird隔离crosstalk，而且在PD区增加pixel与pixel之间的DTI isolation，进一步降低了电性和光的crosstalk； 1.2.3 SEM实物分析.

FSI和基础的CMOS logic工艺一样，首先完成前道工艺（FEOL，front-end-of-line），然后做后道工艺（BEOL，back-end-of-line），最后在表面做光学模块（color filter以及micro-lens）。 FSI的一个主要问题在于光进入到silicon之前需要穿过较厚的金属布线层，这导致了较多的光子损失，影响了最终的量子效率（QE，quantum efficiency）。 特别是像素不断缩小，有效的感光面积占整个pixel的区域变得更加有限。

Dec 1, 2012 · We have confirmed about 50% reduction of crosstalk by using backside DTI. The crosstalk of 1.12μm backside DTI pixel is lower than that of 1.4μm BSI pixel.

Jan 1, 2020 · In this section we describe briefly the challenges for scaled down pixels in a modern complementary metal-oxide-semiconductor (CMOS) image sensor chip. We review various technologies used to overcome these challenges and show why BSI is the most natural solution for such sensors.

Jun 26, 2020 · In this study, a back-side illuminated CMOS image sensor (BSI-CIS) without through-silicon via (TSV) is developed with thin wafer handling combination with ultra-wafer thinning...