Mar 24, 2022 · This study provides a solution for p-type doping of Al-rich AlGaN, and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.

Oct 1, 2016 · High angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) was performed using a probe corrected FEI Titan G2 60-300kVS/TEM at 200 kV for Z-contrast imaging of AlGaN epitaxial layers.

Oct 22, 2024 · Scanning Tunneling Electron Microscope (STEM) images of the interface revealed atomics disorder in the AlGaN layer, a result of damage from hydrogen plasma during diamond growth. The large phonon mismatch between AlGaN and Diamond, and the atomic disorder in the AlGaN layer are responsible for the large TBR Di / AlGaN we measured for the direct ...

Dec 18, 2019 · AlGaN/AlN superlattices (SLs) are key building blocks for vertical emitting devices, especially in the deep UV spectral range. Abrupt interfaces of 30-pair AlGaN/AlN (6.6 nm/3.3 nm) SLs with an average Al composition of 55.3% have been grown by NH 3 …

Jan 31, 2018 · Two types of AlGaN/GaN structures were grown for this investigation: structures with varying Al flux or AlGaN thicknesses for scanning transmission electron microscopy (STEM) only, and 15-period superlattices with fixed aluminum flux and layer thicknesses for high-resolution x-ray diffraction (HRXRD) measurements.

Nov 1, 2021 · AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV) light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap. AlGaN-based devices have extensive applicability owing to their stable physico-chemical properties.

Nov 30, 2023 · In this research, Γ -gated AlGaN/GaN HEMTs with different layout designs and heights of gate stems were fabricated to investigate their impacts on the noise performance in the Ka-band.

Jan 1, 2024 · AlGaN/GaN high electron mobility transistor (HEMT) structures are promising for high power and high speed electronic applications. The selection of a good buffer structure is crucial for the achievement of high quality HEMT devices.

Download scientific diagram | (a) HAADF-STEM image of the AlGaN/AlN/GaN heterostructure in the [21̄1̄0] direction. (b) Schematic drawing of the crystal structure of (Al)GaN projected in...

Plan-view aberration-corrected HAADF-STEM image of the AlGaN sample, showing the core structure of an edge-type dislocation (5/7-atom ring) (a,d,g), an undissociated mixed-type dislocation (double 5/6-atom ring) (b,e,h), and a dissociated mixed-type dislocation (7/4/8/4/9-atom ring) (c,f,i). Raw un filtered images (a c), and ABSF-