May 15, 2015 · Herein, the growth habits of aluminum nitride (AlN) nanostructures and single crystals synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport process were investigated...

Aug 31, 2015 · Transmission electron microscopy (TEM) and electron back-scattered diffraction (EBSD) analyses were employed to investigate the overall crystalline quality and various kinds of defects....

Sep 20, 2018 · Analysis by high-resolution probe-corrected scanning transmission electron microscopy (STEM) imaging and electron energy-loss spectroscopy (EELS) evidences a switch of the N-polar domains to metal...

In this work, we present a method for growing highly c-axis oriented aluminum scandium nitride (AlScN) thin films on (100) silicon (Si), silicon dioxide (SiO2) and epitaxial polysilicon (poly-Si)...

Apr 18, 2022 · In the present work, by fully utilizing the magneto-sputtering combined with the high-temperature annealing technique, we obtained the single-crystalline semipolar (11−22) AlN template on nonpolar m -plane sapphire substrate.

Thickness dependent thermal conductivity measurements were made on aluminum nitride (AlN) thin films grown by two methods on the (0001) surfaces of silicon carbide (SiC) and sapphire substrates...

May 17, 2016 · In this work we demonstrated that the epitaxial growth of () semi-polar AlN on (0001) AlN by constructing () and () twin structures. This new method is relative feasible than conventional...

Mar 29, 2023 · This study used cross-sectional and plan-view transmission electron microscopy (TEM) to elucidate the unique structures of vapor-phase-grown AlN/FFA Sp-AlN/NPSS and provide a practical solution for dislocation reduction.

Sep 1, 2014 · High resolution TEM imaging and analytics with high spatial resolution is used to measure the AlN layer thickness with sub nm precision. This is challenging because of the weak contrast between GaN, AlN and AlGaN due to the same lattice structures.

May 23, 2016 · The microstructure of an AlN template after high-temperature annealing was investigated by transmission electron microscopy (TEM). The AlN template was prepared by depositing an AlN layer of about 200 nm thickness on a sapphire (0001) substrate by metal–organic vapor phase epitaxy.