Abstract: In this work, the influence of TiAl gate electrode fabricated by atomic layer deposition (ALD) and physical vapor deposition (PVD) on threshold voltage ( Vt ) for metal-gated NMOSFETs is respectively investigated.

This review covers both scientific and technological parts related to the ALD of metal gates including the concept of effect work function, the material selection, the precursors for the deposition, the threshold voltage (Vt) tuning of the metal gate in contact with HfO2/SiO2/Si.

Oct 20, 2015 · TiAlC film grown by thermal atomic layer deposition (ALD) technique was investigated as N type work function metal for high-κ dielectric/metal gate (HKMG) last FinFET integration, due to the...

Mar 15, 2016 · N type metal gate TiAlC film was grown by thermal atomic layer deposition (ALD) technique using titanium tetrachloride (TiCl 4) and triethylaluminum (TEA) as precursors for the first time. The physical characteristics of the TiAlC film such as chemical composition, growth rate and crystal morphology were estimated by X-ray photoemission ...

Mar 15, 2016 · N type metal gate TiAlC film was grown by thermal atomic layer deposition (ALD) technique using titanium tetrachloride (TiCl4) and triethylaluminum (TEA) as precursors for the first time.

Atomic layer deposition (ALD) is a method based on sequential self-saturated surface reactions, leading to the controlled layer-by-layer growth of thin films at molecular level.

In this work, atomic layer deposition (ALD) metal films, including TaN, TiN (TiSiN), TiAl and CVD W, were studied for replacement metal gate application. Challenges of step coverage & gap-fill, loading effect and tunable range of work function will be discussed and addressed.

Nov 2, 2021 · In this work, the influence of TiAl gate electrodes fabricated by physical vapor deposition (PVD) and atomic layer deposition (ALD) on electron mobility for metal-gated NMOSFETs is respectively...

Abstract: In this work, the influence of TiAl gate electrodes fabricated by physical vapor deposition (PVD) and atomic layer deposition (ALD) on electron mobility for metal-gated NMOSFETs is respectively investigated.

Nov 1, 2001 · The microstructural characteristics and electrical and chemical properties of TiAlN films deposited by the atomic layer deposition (ALD) method were investigated. The growth rate of TiAlN film was measured to be 1.67 Å/cycle. TiAlN film deposited by ALD has a B1 (NaCl) structure with a lattice parameter of 4.20 Å.