Extreme ultraviolet lithography (also known as EUV or EUVL) is capable of resolving features below 20nm in conventional lithography style. However, the 3D reflective nature of the EUV mask results in new anomalies in the imaging.

Dec 23, 2022 · Huawei has filed a patent application covering an extreme ultraviolet (EUV) lithography scanner, according to UDN. If the company builds such a scanner and achieves decent productivity, uptime,...

15 hours ago · This same concept is used to test many new technologies to vet them prior to production. In the case of low-NA EUV at 7nm, it was used to generate yield learnings before the cost made sense. The initial source power at that time was too low to make EUV competitive with DUV quadruple patterning. High-NA Cost

Compared to its 10nm FinFET predecessors, Samsung’s 7LPP technology not only greatly reduces the process complexity with fewer layers and better yields, but also delivers up to a 40% increase in area efficiency with 20% higher performance or up to 50% lower power consumption.

Oct 18, 2018 · Compared to its 10nm FinFET predecessors, Samsung’s 7LPP technology not only greatly reduces the process complexity with fewer layers and better yields, but also delivers up to a 40% increase in area efficiency with 20% higher performance or …

Jun 15, 2017 · Development of new PAG/Resin enables breakthrough performance. 14nmhp LS can be resolved with reasonable LWR and wide process window. Challenging for 15nmhp LS Etch transfer to dielectric film using all JSR tri layer stack. 15nmhp LS Etch transfer have been succeed with JSR tri layer stack.

May 5, 2017 · The second-generation 7 nm from TSMC (CLN7FF+) will use EUV for select layers and will require developers to redesign EUV layers according to more aggressive rules.

Jan 18, 2018 · HALF MOON BAY, Calif. — Extreme ultraviolet lithography (EUV) is set to enable 10-nm and 7-nm process nodes over the next few years, but significant work is still needed on photoresists to enable 5-nm chips, according to an analysis released at the Industry Strategy Symposium here.

Feb 2, 2017 · We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization pitch of 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels for the first time.

The N7+ process with EUV technology is built on TSMC's successful 7nm node and paves the way for 6nm and more advanced technologies. TSMC Fab 15 is the production facility of 7+ EUV. The N7+ volume production is one of the fastest on record in Fab 15.