Aug 13, 2024 · SK hynix announces it plans to develop 4F2 (square) DRAM, joining South Korean rival Samsung with vertically stacked DRAM tech for AI chips of the future.

May 28, 2024 · The 4F2 VCT is an interim, short-term proposed solution, where Samsung also indicated the possible use of the oxide semiconductor channel, just as in IME's 2T0C approach. It can be stacked twice or more monolithically.

A novel 4F 2 dynamic random access memory (DRAM) cell transistor structure was proposed that can solve various process problems and special failure modes that caused by floating body. The suitability of the transistor scheme for future DRAM technology nodes was also verified.

Aug 16, 2024 · SK hynix says adopting 4F2 structures and 3D transistors will increase the cost-efficiency of EUV lithography usage in DRAM production.

A 275Mbit OCTRAM array was fabricated with WL 54nm/BL 63nm pitches and showed successful DRAM operation in the designed voltage range, making it a breakthrough technology for future high density 4F 2 DRAM.

Dec 10, 2024 · Kioxia Corporation, a world leader in memory solutions, today announced the development of OCTRAM (Oxide-Semiconductor Channel Transistor DRAM), a new type of 4F2 DRAM, comprised of an oxide-semiconductor transistor that has a high ON current, and an ultra-low OFF current, simultaneously.

Oct 27, 2024 · The new 4F² DRAM developed by a Kioxia-led team combines gate-all-around (GAA) IGZO (indium-gallium-zinc oxide) vertical channel transistors (VCTs) with a unique design that places transistors above high-aspect-ratio capacitors to reduce thermal stress and suppress electrical interference like "row hammer."

Abstract: In this work, a novel 4F 2 VCT (vertical channel transistor) targeting for next generation of DRAM is proposed. We approached process feasibility and device performance of 4 F 2 VCT by TCAD simulation.

Aug 14, 2024 · SK hynix, according to a report by The Elec, is said to develop a 4F2 (square) DRAM in order to reduce the high cost associated with the extreme ultraviolet (EUV) processes since the commercialization of 1c DRAM.

Jan 31, 2011 · We recently acquired Samsung’s latest DDR3 SDRAM, allegedly a 3x-nm part. When we did a little research, we found that the package markings K4B2G0846D-HCH9 lined up with a press release from Samsung last year about their 2 Gb 3x-nm generation DRAMs.