2N3019/D 2N3019, 2N3019S, 2N3700 80V, 1A NPN Small Signal Transistor Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 140 Vdc Emitter−Base Voltage VEBO 7 ...

Order today, ships today. 2N3019 – Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 800 mW Through Hole TO-39 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

6 days ago · 2N3019 Microchip Technology Bipolar Transistors - BJT 80V 1A 800mW Small-Signal BJT THT datasheet, inventory, & pricing.

Order today, ships today. 2N3019 – Bipolar (BJT) Transistor NPN 80 V 1 A 800 mW Through Hole TO-5 from Microchip Technology. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

The 2N3019 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case, designed for high-current, high frequency amplifier application. It feature high gain and low saturation voltage.

This 2N3019 silicon NPN transistor device is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-205AA (TO-5) Long Lead package as well as a TO-205AD (TO-39) package, when S suffix is added.

2N3019 2N3020 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage …

View 2N3019 by STMicroelectronics datasheet for technical specifications, dimensions and more at DigiKey.

Apr 10, 2025 · 2N3019 STMicroelectronics Bipolar Transistors - BJT NPN General Purpose datasheet, inventory, & pricing.

This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in …