SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

The essence of the problem of bad money in domestic SiC silicon carbide MOSFET In order to pursue the specific on-resistance ...

Maintenance cost : The life of low-reliability domestic silicon carbide MOSFET devices is only 1-2 years (the life of ...

Jensen Huang’s keynote at GTC 2025, the Android 16 Beta 3 release, the state of solid-state EV battery startups, Nexperia's ...

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

The IC supplies the flexibility to function as either a single-channel H-bridge or two half-bridge channels gate driver. When paired with an external MOSFET, it can replace mechanical relays, ...

NoMIS Power's latest advancement significantly extends the SCWT of SiC MOSFETs to a minimum of 5 µs, compared to the current ...

InvestorPlace - Stock Market News, Stock Advice & Trading Tips In 1844, American inventor Samuel Morse transmitted the first long-distance ...

MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor ... To confirm, you can use a multimeter to test the transistor. If the transistor isn't showing the correct voltages or resistances ...

American inventor Samuel Morse transmitted the first long-distance telegraph from Washington, D.C., to Baltimore: “What hath ...