SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.
Jensen Huang’s keynote at GTC 2025, the Android 16 Beta 3 release, the state of solid-state EV battery startups, Nexperia's ...
NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...
NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...
NoMIS Power's latest advancement significantly extends the SCWT of SiC MOSFETs to a minimum of 5 µs, compared to the current ...
MOSFET stands for Metal Oxide Semiconductor Field Effect Transistor ... To confirm, you can use a multimeter to test the transistor. If the transistor isn't showing the correct voltages or resistances ...
Among the TSEPs of the SiC mosfet, the turn-off delay time has good linearity over ... affecting the switching process of the device under test (DUT) and increasing switching loss. To address these ...
Toshiba Electronics Europe GmbH has begun mass production of the AEC-Q100 qualified TB9103FTG MOSFET gate driver IC, featured ...
Agentic AI chip design; $6.5B AI acquisition; IC energy consumption and emissions; US allies export controls; CPO switches; ...
Onsemi has introduced the first generation of its 1200V SiC MOSFET based SPM 31 intelligent power modules (IPMs).
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback