Samsung has introduced its upcoming 10th-generation V-NAND flash memory with over 400 active layers and a 5.6 GT/s interface speed at the International Solid-State Circuit Conference 2025.

By stacking III–V layers (multijunction cells), solar cells achieve higher efficiency compared to silicon-based cells, with current records at 39.5 percent. However, III–V materials are ...

Infineon Technologies India Pvt. Ltd, INDIA. Abstract: Today, functional verification consumes most of the time in the design of layered protocols like OSI Model, PCI Express, etc. As we think of ...