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Given how SRAM-intensive modern designs are, SRAM cell size and density are major characteristics of new fabrication technologies. Apparently, the SRAM density of Intel's 18A manufacturing process ...
This paper presents a Seven-transistor SRAM cell intended for the advanced microprocessor. A low power write scheme, which reduces SRAM power by using seven-transistor sense-amplifying memory cell, ...
A new technical paper titled “An Investigation of Minimum Supply Voltage of 5nm SRAM from 300K down to 10K” was published by ...
Wong’s team has turned to a new type of memory design called Gain Cell memory, which combines the advantages of both DRAM and SRAM. The hybrid gain cell offers a middle ground which has the ...
Data remanence is the residual physical representation of data that has been in some way erased. Contrary to common wisdom, the SRAM memory cells do not entirely loose the contents when power is cut.
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