Electronics3609d
Vishay Intertechnology 650 V and 1,200 V SiC Schottky diodes in SOT-227 package increase efficiency in high frequency applications
The diodes deliver high temperature operation to 175° C and a positive temperature coefficient for easy parallelling.
Electronic Products10d
Vishay expands SiC Schottky diode portfolio
Vishay Intertechnology, Inc. has introduced 16 new 650-V and 1,200-V silicon carbide (SiC) Schottky diodes in the ...
Compoundsemiconductor.net15d
Vishay launches new high voltage SiC diodes
650 V and 1200 V Schottky devices claimed to offer best trade-off between capacitive charge and forward voltage drop Vishay has introduced 16 new 650 V and 1200 V SiC Schottky diodes in the ...
EE World Online10d
SiC Schottky diode range handles 40 A to 240 A
Vishay Intertechnology, Inc. introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the ...
Yahoo Finance3d
Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications
Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package.
Electropages11d
SiC Schottky diodes in SOT-227 package increase efficiency in high frequency applications
Vishay Intertechnology, Inc. has introduced 16 new 650V and 1200V SiC Schottky diodes in the industry-standard SOT-227 package. Designed to deliver high speed and efficiency for high frequency ...
manilatimes15d
Vishay Intertechnology 650 V and 1200 V SiC Schottky Diodes in SOT-227 Package Increase Efficiency in High Frequency Applications
Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package.