The devil in the defects Unfortunately, unlocking the promise of SiC demands addressing a number of key challenges. A major one is an imperfect interface between SiC and SiO 2 that prevents SiC ...

The figure below illustrates the predicted flowfield adjacent to the reacting surface of a SiC-coated leading edge in a hypersonic environment, showing the density of SiO, which is an oxidation ...

The oxidation conditions during fabrication ... energy level (i.e., 0.65–0.92 eV from the conduction band edge of SiC), and after comparing the experimental results with theoretical studies ...

A research team, led by Prof. HUANG Zhulin at the Institute of Solid State Physics, the Hefei Institutes of Physical Science ...

As demand for high-efficiency power electronics continues to grow, Excelliance MOS is leveraging Silvaco’s advanced DTCO platform to streamline research and development for cutting-edge SiC technology ...