An article recently made available on Engineering delves into silicon carbide (SiC)-based pressure sensors. A comprehensive review paper titled ...

It begins with an analysis of SiC single-crystal growth and epitaxy. The growth quality of SiC single-crystal substrates is crucial for device performance, but it faces challenges like high costs ...

RIR Power Electronics, a global semiconductor company, is on track to establish India’s First Silicon Carbide (SiC) Semiconductor production facility in Odisha, with the production of epitaxy wafer as ...