Santa Clara, CA and Kyoto, Japan, April 24, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized ...

Suitable for OBCs, along with OBC applications adopting ROHM's power semiconductor devices. ROHM's EcoGaN™ Series of 650V GaN HEMTs in the Toll Package Comprises compact, energy-efficient ...

KYOTO -- Japanese electronics group Rohm has developed a silicon carbide (SiC) power semiconductor device designed to be 50% more energy-efficient than competing parts, opening up the prospect of ...

KYOTO, Japan, April 24, 2025 /PRNewswire/ -- ROHM Co., Ltd. has developed new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package for power-factor-correction (PFC) circuits and LLC ...