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Considering the low reliability of ReRAM cells, we demonstrate how SC’s robustness to errors copes with ReRAM’s variability. Our evaluation shows significant improvements in throughput (1.39x, 2.16x) ...
Researchers have created a next-generation RAM that can process data 10,000 times faster than anything we have right now.
Structure & Process module A typical ReRAM memory cell has a resistive switching element (RSE) electrically connected to the drain of a transistor. Such RSE, arranged as a backend process module, is ...
ReRAM Computing Circuit is under the microscopes. Disclaimer: AAAS and EurekAlert! are not responsible for the accuracy of news releases posted to EurekAlert! by contributing institutions or for ...
Embedded World Video: Weebit Nano on why the next NVM is ReRAM At Embedded World 2025 we caught up with Coby Hanoch, the CEO of Weebit Nano, as part of our promotional coverage for the event. He ...
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4DS Memory Reports Increased Loss Amid Strategic AdvancesKey developments include the shipment and analysis of the Fifth Platform Lot and a new design agreement with Infineon Technologies LLC to develop a custom ReRAM ... its memory cell array from ...
He discusses how Weebit Nano is a leading developer of advanced semiconductor ReRAM memory technology that will drive the proliferation of intelligent devices. The company is focused on delivering the ...
The innovation enables new layouts, smaller cell footprints and improved densities in DRAM, MRAM and ReRAM products — bringing about higher levels of performance, reliability and density than ever ...
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