In today’s digital-first world, the demand for fast, responsive, and reliable web applications has never been higher. Whether ...

This phenomenon, known as Raman scattering, occurs due to the vibrational energy levels of the molecules in the sample. Analyzing the energy shift gives information about the vibrational modes of the ...

In this case, a 680 nm excitation laser translates to a Raman shift of 2000-4000 cm-1. The probe filters are chosen to enable excitation and collection at both wavelengths. In operation ...

A portable Raman analyzer enables remote detection of hydrogen gas at concentrations below 1 part per million, identifying leaks of a few hundred milliliters per minute from several meters away.

Figure 1: Raman shift and diamond Raman laser design. In many materials operating at elevated temperatures, the one-phonon state |3〉 may be occupied, which reduces the Raman gain. For diamond ...

The position of the E 2 (high) mode was mapped, as shown in Figure 4c. The Raman shift of this mode can be correlated with strain in GaN, with an increase in Raman shift relative to 567 cm-1 ...

Over the last decade Raman spectroscopy has become established as a physicochemical technique for the rapid identification of microbes. This powerful analytical method generates a spectroscopic ...

The CVA is made up of an ASTM Raman shift standard and a NIST-traceable verification sample that adheres to USP/EP guidelines. Mira P—Fully Compliant With FDA 21CFR Part 11 Mira P complies with FDA 21 ...

The Raman Microspectroscopy Laboratory is a core research facility housed in the Department of Geological Sciences for fast, non-destructive characterization and chemical imaging of diverse materials ...

Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices.