AOS Gen3 SiC MOSFETs provide up to a 30% improvement in switching FOM, while maintaining low conduction losses at high-load conditions.

Alpha and Omega Semiconductor Limited (AOS) has released its next generation (Gen3) 1200V aSiC MOSFETs designed to maximise efficiency in a growing market of high-power applications. These Gen3 ...

Navitas Semiconductor’s latest GeneSiC MOSFETs exceed AEC-Q101 standards, extending lifetime in automotive and industrial ...

ROHM has developed N-channel power metal-oxide semiconductor field-effect transistors (MOSFETs) featuring industry-leading ...

Infineon’s 750-V CoolSiC G2 MOSFETs enhance system efficiency and power density in automotive and industrial power conversion ...

NoMIS claims significant reductions in on-resistance for its 1.2-kV planar SiC MOSFETs, supporting higher-frequency switching ...

The MOSFETs improve efficiency, performance, and make it easier to upgrade systems without redesigning, boosting power & ...

Navitas Semiconductor introduces a new level of reliability to meet the system lifetime requirements of the most demanding ...

Unprecedented reliability combined with superior performance & optimized, high-creepage package sets a new benchmark in ...

NAVITAS SEMICONDUCTOR HV-T2PaK 650V and 1200V ‘trench-assisted planar’ SiC MOSFETs combined with an optimized, HV-T2Pak ...