Littelfuse has released the IXD2012NTR, a high-speed, high-side and low-side gate driver designed to drive two N-channel ...

SemiQ Inc. has released a highly efficient 1200V SiC MOSFET Six-Pack Modules series. These have been developed to facilitate lower cost and more compact large-scale system-level designs.

Designed for extreme environments and conditions, radiation-hardened MOSFETs are available from 100 Krad to 300 Krad Total ...

A new family of 25 superjunction MOSFETs from Magnachip offers improved specific on-resistance, faster switching speeds, and ...

Microchip Technology has announced the completion of its radiation-hardened power MOSFETs, achieving JANSF qualification for the JANSF2N8587U3 model, which can withstand up to 300 Krad (Si ...

Technology announces its completion of its family of radiation-hardened power MOSFETs to the MIL-PRF-19500/746 slash-sheet ...

ROHM Semiconductor has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability. They are designed for power supplies inside high-performance enterprise ...

Nexperia’s new X.PAK packaging combines high thermal performance, compact size, and easy assembly for high-power applications ...

Microchip has achieved JANSF qualification for a 100V n-channel mosfet to to 300krad (Si) TID (total ionising dose), and completed its family of ...

The company operates through Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), Diodes, Optoelectronic Components, ...

Looking at a full-bridge circuit board with a shoot-through issue and demonstrating the fix with a simple SPICE simulation.

Santa Clara, CA and Kyoto, Japan, April 10, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability.