For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

IQE, a supplier of compound semiconductor wafer products and advanced material solutions, and X-FAB Silicon Foundries, the ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...

IQE, a maker of compound semiconductor wafer products, and the analogue/mixed signal foundry X-FAB have announced a Joint ...

IQE plc and X-FAB Silicon Foundries SE have announced a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution.

IQE announced on Thursday that it has entered into a joint development agreement with X-FAB to create a European-based ...

Meeting to be held in event that closing date for previously announced merger with SEGA SAMMY does not close prior to meeting date LAS VEGAS, April 11, 2025--(BUSINESS WIRE)--GAN Limited (NASDAQ ...

STMicroelectronics and Innoscience sign GaN technology development and manufacturing agreement Joint Development Agreement (JDA) on GaN technology to build the future in power electronics for AI ...