A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world's largest N-polar gallium nitride (GaN) wafer, at eight inches ...

On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...

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In addition, the agreement allows Innoscience to utilize ST’s front-end manufacturing capacity outside China for its GaN wafers, while ST can leverage Innoscience’s front-end manufacturing ...

Polar Semiconductor ("Polar"), the only U.S.-owned merchant foundry specializing in sensor, power, and high-voltage ...

Chinese wafer foundry Epiworld, is seeking an IPO boost from investors, as it fumbles with falling wafer prices, and declining revenues.

A world-first N-polar GaN wafer created by Chinese scientists could be a game changer for the semiconductor industry.

Polar Signs Agreement with Renesas to License GaN-on-Si Technology and Onshore Commercial Fabrication of Advanced Devices on 200mm Wafers The Partnership Strengthens the Domestic Supply Chain and ...