Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses.

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

Navitas high-power GaNSafe 4 th generation family integrates control, drive, sensing, and critical protection features that ...

A new family of GaN power stages plus an advanced eFuse current-limit approach helps designers achieve safe, high power for ...

W GaN converter from STMicroelectronics targets fast chargers, adapters, and power supplies for home appliances.

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. "Due to the ...

This article highlights effective design practices for gallium nitride (GaN) half-bridge converters driven by a 100 V ...

Meeting to be held in event that closing date for previously announced merger with SEGA SAMMY does not close prior to meeting date LAS VEGAS, April 11, 2025--(BUSINESS WIRE)--GAN Limited (NASDAQ: GAN) ...

Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices.