GaN (Gallium Nitride) technology innovator Finwave Semiconductor has announced a successful $8.2m bridge investment round.

Productizing Disruptive GaN-on-Si Technology to Address Increasing Performance and Efficiency Demands Finwave high-power RF ...

The laboratory is introducing the eight-inch N-polar GaN technology into mass production, with the aim of reducing RF device costs by 60 per cent by 2026. Despite the promising outlook ...