One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

Polar Semiconductor ("Polar"), the only U.S.-owned merchant foundry specializing in sensor, power, and high-voltage ...

Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across automotive, data ...

Innoscience is a Chinese manufacturer of GaN-on-Si (gallium nitride on silicon) products. STMicro’s partnership aims to leverage the advantages that GaN offers – high power density ...

STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride on silicon (GaN-on-Si).

02577.HK), the world leader in 8” GaN-on-Si (gallium nitride on silicon) high-performance low-cost manufacturing, announce the signature of an agreement on GaN technology development and ...

Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and ...

Polar Signs Agreement with Renesas to License GaN-on-Si Technology and Onshore Commercial Fabrication of Advanced Devices on 200mm Wafers The Partnership Strengthens the Domestic Supply Chain and ...

Partnership strengthens the domestic supply chain of Polar Semiconductor, and enhances access of this dual-use technology to ...

As part of this agreement, Polar will fabricate High Voltage 650V Class GaN-on-Si devices for Renesas and other customers in its 200mm automotive quality high-volume manufacturing facility in ...