One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

Fraunhofer IAF has developed a monolithic bidirectional switch with a blocking voltage of 1200 V using its GaN-on-insulator ...

At the upcoming PCIM Conference (6th - 8th May, Nuremberg, Germany) Fraunhofer IAF will present a paper on a novel GaN ...

Latest releases include bi-directional GaNFast ICs with IsoFast™ drivers, auto-qualified GaNSafe ICs, dedicated GaNSense ...

Finland-based Beneq has announced that its Transform ALD cluster tool has been qualified for volume production of GaN-based ...

At the center of the presented setups will be the R&S RT-ZISO isolated probing system from Rohde & Schwarz. This next ...

This architecture ensures high-quality interface engineering and process reliability, which is critical for wide-bandgap materials such as GaN and SiC. Additional capabilities include nitride film ...

In collaboration with Savoy International Group, the company will debut its digital controller of a silicon carbide (SiC) ...

TORRANCE, Calif., April 22, 2025 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) ...

Transform ALD cluster tool has been qualified for volume production of GaN-based power devices on 8'' GaN-on-Si wafers by a ...