News

Navitas Showcases Advances in GaN and SiC Technologies, Including World’s First Production Released 650V Bi-Directional GaNFast™ ICs at PCIM 2025
Latest releases include bi-directional GaNFast ICs with IsoFastâ„¢ drivers, auto-qualified GaNSafe ICs, dedicated GaNSense ...
Compound Semiconductor1d
Navitas to show GaN and SiC advances at PCIM
Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and ...
scmp.com25d
Largest gallium wafer at lowest cost? How China leads on next-gen semiconductor tech
A breakthrough in next-generation semiconductor technology has been announced by Chinese researchers, with the creation of the world’s largest N-polar gallium nitride (GaN) wafer, at eight ...
Electropages15d
New benchmark for 100V GaN power transistors
Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100V eGaN FET that delivers superior performance, higher efficiency, and lower system costs for power conversion ...
Digi Times1mon
China breaks ground in GaN: first 8-inch N-polar wafer, 100nm PDK signal high-frequency chip ascent
On March 24, 2025, Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based N-polar gallium nitride on insulator (GaNOI) material ...