Chinese researchers have discovered the leading cause of defects in the promising semiconductor material gallium nitride (GaN). This material is critical for developing advanced electronics ...

Power converters for these applications therefore need an operating range of more than 1000V. So far, defects have limited the high voltage reliability of GaN devices. The first obstacle is the GaN ...

Recently, we have expanded the application of MST to a wider range of devices. It’s now applied to a variety of silicon technologies, from CMOS and DRAM to power and RF devices, and it’s also being ...

To produce high-quality GaN optoelectronic devices, manufacturers must minimize mechanical and electrical heterogeneity caused by strain and crystal defects. Therefore, non-destructive analytical ...

[Brian Dipert] looked at what this means in a practical sense by tearing down a GaN phone charger. The charger in question is a 30 watt USB-C charger produced by Voltme. It cost [Brian] just $10 ...

In this project, a high-quality and large-diameter GaN wafer is developed to reduce energy and power losses in power devices and LEDs. Specifically, by reducing the crystal defects which affect the ...

To produce high-quality GaN optoelectronic devices, manufacturers must minimize mechanical and electrical heterogeneity caused by strain and crystal defects. Therefore, non-destructive analytical ...