One implementation of the two materials in RF power amplifiers is as a stack, known as GaN-on-SiC, which was intended to give ...

But inside its aluminum alloy housing is an integrated GaN power supply delivering up to 232W of combined power output, so ...

Recently, we have expanded the application of MST to a wider range of devices. It’s now applied to a variety of silicon technologies, from CMOS and DRAM to power and RF devices, and it’s also being ...

Latest releases include bi-directional GaNFast ICs with IsoFast™ drivers, auto-qualified GaNSafe ICs, dedicated GaNSense ...

Advances in semiconductor and power electronics technologies, led by increasing deployment of wide-bandgap power devices, are ...

Thunderbolt™ 5 Docking Station and high-speed Thunderbolt 5 cable. BELLEVUE, Wash, April 23, 2025 (GLOBE NEWSWIRE) -- Anker, ...

Navitas high-power GaNSafe 4 th generation family integrates control, drive, sensing, and critical protection features that ...

Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

CUKTECH, an integral member of the Xiaomi ecosystem, has officially launched its most advanced charging solution to date: the ...

With its integration of Gallium Nitride (GaN) power supply technology, the dock eliminates bulky power adapters while offering up to 232 watts of total power output and 250 watts of total power input.