FMC specializes in memory that uses ferroelectric hafnium oxide (HfO₂) to create DRAM+ that retains data without power. The technology replaces the typical capacitor in DRAM wit ...

Unlike PZT, HfO₂ is fully CMOS-compatible, scales below 10 nanometers ... densities and performance levels that rival conventional DRAM, potentially reaching gigabit or even gigabyte capacities.

it can provide significant power-performance improvements to CMOS-based logic IC’s from 90nm to 20nm, as well as DRAM ICs. DDC technology offers designers flexibility to develop low-power improved ...