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Samsung reveals 16-layer 3D DRAM plans with VCT DRAM as a stepping stone — IMW 2024 details the future of compact, higher density RAMThe 4F Square design will utilize vertical stacking to reduce DRAM cell sizes by around 30% from today's standard 6F Square DRAM cell structure. 4F Square, in addition to being more horizontally ...
San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...
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