The strained silicon techniques for MOS transistor were first used by Intel in their 90nm process technology in 2003 ... is less dependent on back gate bias compared to bulk CMOS. This makes the SOI ...

NSCore's PermSRAM(R) is the only embedded CMOS, one time programmable (OTP), non-volatile RAM IP of its kind, utilizing the 'hot carrier effect' to trap charge in the sidewall spacer of the gate.