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3D X-DRAM aims for 10x capacity of today's memory — NEO Semiconductor's memory has up to 512 Gb per moduleNEO Semiconductor has announced progress on its new 3D X-DRAM technology, with new 1T1C and 3T0C chip designs increasing DRAM ...
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Samsung reveals 16-layer 3D DRAM plans with VCT DRAM as a stepping stone — IMW 2024 details the future of compact, higher density RAMOn the other hand, the microprocessing technology of existing DRAM is limited," said Lee. But in the coming years, Lee predicts "new innovations are expected to occur in the structure of cells." ...
San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...
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