Latest releases include bi-directional GaNFast ICs with IsoFast™ drivers, auto-qualified GaNSafe ICs, dedicated GaNSense ...

Navitas Semiconductor will be exhibiting several GaN and SiC breakthroughs in AI data centres, EVs, motor drives, and ...

Polar and Renesas will work together to scale commercial production of GaN devices, expanding its use across automotive, data ...

IQE announced on Thursday that it has entered into a joint development agreement with X-FAB to create a European-based ...

A new family of GaN power stages plus an advanced eFuse current-limit approach helps designers achieve safe, high power for ...

IQE plc and X-FAB Silicon Foundries SE have announced a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution.

Polar Semiconductor ("Polar"), the only U.S.-owned merchant foundry specializing in sensor, power, and high-voltage ...

Navitas high-power GaNSafe 4 th generation family integrates control, drive, sensing, and critical protection features that ...

Highlights of ROHM’s presence at PCIM 2025 include: ...

GaN and SiC power semiconductors. Major technology and system breakthroughs include: The world's first production-released 650 V bi-directional GaNFast ICs and IsoFast, high-speed isolated gate ...

Suitable for OBCs, along with OBC applications adopting ROHM's power semiconductor devices. ROHM's EcoGaN™ Series of 650V GaN HEMTs in the Toll Package Comprises compact, energy-efficient devices that ...