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Samsung reveals 16-layer 3D DRAM plans with VCT DRAM as a stepping stone — IMW 2024 details the future of compact, higher density RAMOn the other hand, the microprocessing technology of existing DRAM is limited," said Lee. But in the coming years, Lee predicts "new innovations are expected to occur in the structure of cells." ...
San Jose, California, May 13, 2024 – NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body Cell ...
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